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Other articles related with "high breakdown voltage"：
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48502 |
Da Ma(马达), Xiao-Rong Luo(罗小蓉), Jie Wei(魏杰), Qiao Tan(谭桥), Kun Zhou(周坤), Jun-Feng Wu(吴俊峰) |
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Ultra-low specific on-resistance high-voltage vertical double diffusion metal-oxide-semiconductor field-effect transistor with continuous electron accumulation layer |
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Chin. Phys. B
2016 Vol.25 (4): 48502-048502
[Abstract]
(748)
[HTML 1 KB]
[PDF 788 KB]
(384)
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77304 |
Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Chen Xing (陈兴), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage |
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Chin. Phys. B
2014 Vol.23 (7): 77304-077304
[Abstract]
(611)
[HTML 1 KB]
[PDF 433 KB]
(531)
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97201 |
Deng Yong-Hui (邓永辉), Xie Gang (谢刚), Wang Tao (汪涛), Sheng Kuang (盛况) |
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A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain |
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Chin. Phys. B
2013 Vol.22 (9): 97201-097201
[Abstract]
(704)
[HTML 1 KB]
[PDF 643 KB]
(895)
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